unisonic technologies co., ltd 40N15 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2013 unisonic technologies co., ltd qw-r502-882.a 40 a , 150v n-channel power mosfet ? description the utc 40N15 is an n-channel enhancem ent mosfet, it uses utc?s advanced technology to provide the customers with perfect r ds(on) , high switching speed, high current capacity and low gate charge. ? features * r ds(on) <42m ? @ v gs =10v,i d =20a * high switching speed * high current capacity * low gate charge(typical 85nc) to-220f2 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 40N15l-tf2-t 40N15lg-tf2-t to-220f2 g d s tube note: pin assignment: g: gate d: drain s: source
40N15 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-882.a ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 150 v gate-source voltage v gss 25 v drain current continuous i d 40 a pulsed i dm 180 a avalanche current i ar 45.6 a avalanche energy single pulsed e as 650 mj repetitive e ar 21 mj peak diode recovery dv/dt dv/dt 6 v/ns power dissipation p d 210 w junction temperature t j -50~+150 c storage temperature range t stg -50~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 0.7 c/w ? electrical characteristics parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 150 v breakdown voltage temperature coefficient bv dss /t j 0.16 v/c drain-source leakage current i dss v gs =0v, v ds =150v 900 na gate-source leakage current forward i gss v gs =+20v, v ds =0v +100 na reverse v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2.2 3.8 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =20a 5 42 m ? forward transconductance g fs 33 s dynamic parameters input capacitance c iss 2500 3250 pf output capacitance c oss 520 670 pf reverse transfer capacitance c rss 100 130 pf switching parameters total gate charge q g v gs =10v, v dd =50v, i d =1.3a, i g =100a 85 110 nc gate to source charge q gs 15 nc gate to drain charge q gd 41 nc turn-on delay time t d ( on ) v gs =0~10v, v dd =30v, i d =0.5a, r g =25 ? 35 80 ns rise time t r 320 650 ns turn-off delay time t d ( off ) 210 430 ns fall-time t f 200 410 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 45.6 a maximum body-diode pulsed current i sm 182.4 a drain-source diode forward voltage v sd i s =40a, v gs =0v 0.1 1.48 v body diode reverse recovery time t rr v gs =0v, i s =45.6a di f /d t =100a/s 130 ns body diode reverse recovery charge q rr 0.55 c
40N15 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-882.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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